Low energy electron-beam-enhanced formation of ultrathin insulating silicon oxynitride layers on Si(100) at moderate temperatures: in situ determination of the band gap energy using electron energy loss spectroscopy
Authors:
- A. GlachantAGA. Glachant
- 1 January 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 323 (3) , 258-268
Abstract
No abstract availableKeywords
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