The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces
Authors:
- 15 March 2012
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 111 (6) , 064302
Abstract
We have measured the electronic structure at Au nanoisland--niobium doped SrTiO3 interfaces over a range of contact diameters. Electron transport processes at the interface transition from thermionic emission dominated to tunneling dominated, leading to ohmic behavior at small sizes. The transition increases at a much higher rate than is generally expected, emphasizing the need for precise control of nanoscale dimensions for reproducible effects in nanoscale electronic devices.Keywords
This publication has 21 references indexed in Scilit:
- Orientation Controlled Schottky Barrier Formation at Au Nanoparticle−SrTiO3 InterfacesNano Letters, 2010
- Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and ChallengesAdvanced Materials, 2009
- Resistive switching in transition metal oxidesMaterials Today, 2008
- Current mapping of GaN films by conductive atomic force microscopyApplied Physics Letters, 2003
- Scaling of micro-fabricated nanometer-sized Schottky diodesMicroelectronic Engineering, 2002
- Recent advances in Schottky barrier conceptsMaterials Science and Engineering: R: Reports, 2001
- Formation of an electric dipole at metal-semiconductor interfacesPhysical Review B, 2001
- Electron transport at metal-semiconductor interfaces: General theoryPhysical Review B, 1992
- Methods of avoiding edge effects on semiconductor diodesJournal of Physics D: Applied Physics, 1982
- Surface spectroscopy studies of the SrTi(100) surface and the platinum-SrTi(100) interfacePhysical Review B, 1979