A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS

Authors:

1 June 2012

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 1-3
DOI:10.1109/mwsym.2012.6259632

Abstract

A 45GHz Doherty power amplifier is implemented in 45nm SOI CMOS. Two-stack FET amplifiers are used as main and auxiliary amplifiers, allowing a supply voltage of 2.5V and high output power. The use of slow-wave coplanar waveguides (CPW) improves the PAE and gain by approximately 3% and 1dB, and reduces the die area by 20%. This amplifier exhibits more than 18dBm saturated output power, with peak power gain of 7dB. It occupies 0.64mm² while achieving a peak PAE of 23%; at 6dB back-off the PAE is 17%.

Keywords

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