Analysis of sunlight loss for femtosecond laser microstructed silicon and its solar cell efficiency
Authors:
- 4 November 2010
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 103 (4) , 977-982
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Infrared light absorption of silver film coated on the surface of femtosecond laser microstructured silicon in SF6Materials Letters, 2009
- Broad band enhanced infrared light absorption of a femtosecond laser microstructured siliconLaser Physics, 2008
- Measurement of optical and electrical properties of silicon microstructuring induced by ArF excimer laser at SF6 atmosphereApplied Surface Science, 2008
- Chalcogen doping of silicon via intense femtosecond-laser irradiationMaterials Science and Engineering: B, 2007
- Impurity photovoltaic effect with defect relaxation: Implications for low band gap semiconductors such as siliconJournal of Applied Physics, 2004
- Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiationApplied Physics A, 2004
- Microstructuring of silicon with femtosecond laser pulsesApplied Physics Letters, 1998
- Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate LevelsPhysical Review Letters, 1997