Novel self-compliance Bipolar 1D1R memory device for high-density RRAM application
Authors:
- 1 May 2013
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 2159483X,p. 184-187
Abstract
Different from conventional unipolar type 1D1R RRAM devices, in this paper, a bipolar type 1D1R RRAM device structure is firstly proposed and successfully demonstrated by the combined TiOx-based Schottky diode and Cu/HfO2/Pt bipolar RRAM cell. Reliable and uniform self-compliance resistive switching characteristics are obtained by imposing current compliance using the reverse bias current of the TiOx-based Schottky diode. Experiment results show that the novel self-compliance bipolar 1D1R device has high potentiality for high-density integrated nonvolatile memory application.Keywords
This publication has 6 references indexed in Scilit:
- Schottky diode with excellent performance for large integration density of crossbar resistive memoryApplied Physics Letters, 2012
- A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effectApplied Physics Letters, 2011
- A new approach for improving operating margin of unipolar ReRAM using local minimu m of reset voltage2010
- Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates2008
- Control of resistance switching voltages in rectifying Pt∕TiOx∕Pt trilayerApplied Physics Letters, 2008
- 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications2007