Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrate

This publication has 9 references indexed in Scilit:

• Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate
  Journal of Crystal Growth, 2004
• GaN-based epitaxy on silicon: stress measurements
  Physica Status Solidi (a), 2003
• The origin of stress reduction by low-temperature AlN interlayers
  Applied Physics Letters, 2002
• Micro-Raman investigation of strain in GaN and AlxGa1−xN/GaN heterostructures grown on Si(111)
  Journal of Applied Physics, 2002
• Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking
  Applied Physics Letters, 2002
• Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer
  Journal of Crystal Growth, 2002
• Properties of Si-doped GaN films grown using multiple AlN interlayers
  Applied Physics Letters, 1999
• Relaxation Process of the Thermal Strain in the GaN/α-Al₂O₃ Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain
  Japanese Journal of Applied Physics, 1992
• Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
  Journal of Crystal Growth, 1989