Insulating State and Giant Nonlocal Response in anInAs/GaSbQuantum Well in the Quantum Hall Regime

We present transport measurements performed in $\mathrm{InAs}/\mathrm{GaSb}$ double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced nonlocal resistance signal of almost similar magnitude. The coexistence of these two effects is reconciled in a model of counterpropagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.