Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
Authors:
Preprint
Abstract
Semiconducting 2D crystals are currently receiving significant attention due to their great potential to be an ultra-thin body for efficient electrostatic modulation which enables to overcome the limitations of silicon technology. Here we report that, as a key building block for 2D semiconductor devices, vertical p-n junctions are fabricated in ultrathin MoS2 by introducing AuCl3 and benzyl viologen dopants. Unlike usual unipolar MoS2, the MoS2 p-n junctions show (i) ambipolar carrier transport, (ii) current rectification via modulation of potential barrier in films thicker than 8 nm, and (iii) reversed current rectification via tunneling in films thinner than 8 nm. The ultimate thinness of the vertical p-n homogeneous junctions in MoS2 is experimentally found to be 3 nm, and the chemical doping depth is found to be 1.5 nm. The ultrathin MoS2 p-n junctions present a significant potential of the 2D crystals for flexible, transparent, high-efficiency electronic and optoelectronic applications.Keywords
All Related Versions
- Version 1, 2015-02-12, ArXiv
- Published version: Nature Communications, 6 (1), 6564.
This publication has 38 references indexed in Scilit:
- Photovoltaic Effect in an Electrically Tunable van der Waals HeterojunctionNano Letters, 2014
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal DichalcogenidesACS Nano, 2014
- Carrier Control of MoS2 Nanoflakes by Functional Self-Assembled MonolayersACS Nano, 2013
- Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer MaterialsNano Letters, 2013
- Nonvolatile Memory Cells Based on MoS2/Graphene HeterostructuresACS Nano, 2013
- Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond GrapheneACS Nano, 2013
- Integrated Circuits Based on Bilayer MoS2 TransistorsNano Letters, 2012
- MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy GapNano Letters, 2012
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2ACS Nano, 2011
- Control of Electronic Structure of Graphene by Various Dopants and Their Effects on a NanogeneratorJournal of the American Chemical Society, 2010