Scanning Electron Microscope Observations of As+-Ion-Implanted Region
Authors:
- Yasuhito TakahashiYTYasuhito Takahashi
- Yasufumi YabuuchiYYYasufumi Yabuuchi
- Sachiko InazatoSISachiko Inazato
- Kazumichi OguraKOKazumichi Ogura
- Akishige OnoAOAkishige Ono
- 1 October 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (10A) , L1477
Abstract
Lateral and depth profiles of the ion-implanted region were first observed using cleaved cross-sectional scanning electron microscope. The amorphous region induced by ion bombardment appears dark relative to the crystalline region. It is found that the secondary electrons, as well as the backscattered ones, are influenced by the so-called channeling effect.Keywords
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