Dielectric relaxation behavior of bismuth layer structure ceramics
Authors:
- 1 August 1991
- journal article
- research article
- Published by Taylor & Francis in Ferroelectrics Letters Section
- Vol. 13 (2) , 47-54
Abstract
Strong dielectric relaxation behavior in bismuth layer structure ceramics having compositions Bi2 (La½K½)Nb2O9, Bi2La(TiNb)O9 and Bi2La(TiTa)O9 has been observed. Temperature differences of dielectric constant maximum at various frequencies of bismuth layer structure ceramics are much larger than those of perovskite ceramics. A new dielectric anomaly has been observed at about −40°C in the temperature dependence of dielectric constant of Bi4Ti3O12 which is a well known ferroelectric compond with high Curie temperature of 675°C.Keywords
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