Cross-sectional electron microscopy of silicon on sapphire
Authors:
- 15 September 1975
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (6) , 325-327
Abstract
Cross sections of (100)Si/(012)sapphire were examined by transmission electron microscopy. The foil plane was (011)Si and contained the [1̄00]Si growth direction. The number of faults (i.e., microtwins and isolated stacking faults) per cm measured in the [022]Si direction, FD, decreases with increasing distance d from the silicon/substrate growth interface according to the equations FD= (3.1×107)/d0.63 (440⩽d⩽2400 Å), and FD= (1.3×1011)/d1.7 (2400?d?4.3×104 Å). Misfit dislocations were not observed, and no evidence for the presence of an Al‐bearing phase was seen in the proximity of the interface.Keywords
This publication has 12 references indexed in Scilit:
- Cross-sectional specimens for transmission electron microscopyJournal of Applied Physics, 1974
- Correlation of ion channeling and electron microscopy results in the evaluation of heteroepitaxial siliconJournal of Applied Physics, 1973
- Surface charge effects on the resistivity and Hall coefficient of thin silicon-on-sapphire filmsApplied Physics Letters, 1972
- Variations in Electrical Properties of Silicon Films on Sapphire Using the MOS Hall TechniqueApplied Physics Letters, 1972
- The preparation and properties of chemically vapor deposited silicon on sapphire and spinelJournal of Crystal Growth, 1971
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969
- Improvements to the ALBA Machine for Thinning Specimens for Electron MicroscopyReview of Scientific Instruments, 1968
- The nucleation, growth, structure and epitaxy of thin surface filmsAdvances in Physics, 1965
- Electron microscopy and diffraction of twinned structures in evaporated films of goldPhilosophical Magazine, 1963
- Crystallographic Imperfections in Epitaxially Grown SiliconJournal of Applied Physics, 1962