A 90% power-added-efficiency GaInP/GaAs HBT for L-band radar and mobile communication systems
Authors:
- A. MalletAMA. Mallet
- D. FloriotDFD. Floriot
- J.P. ViaudJVJ.P. Viaud
- F. BlacheFBF. Blache
- J.M. NebusJNJ.M. Nebus
- S. DelageSDS. Delage
- 1 March 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 6 (3) , 132-134
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Nonlinear RF Characterization and Modeling of Heterojunction Bipolar Transistors Under Pulsed Conditions1994
- Power GaInP/GaAs HBT MMICs1994
- High-efficient class F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHzIEEE Microwave and Guided Wave Letters, 1993