Low-dispersive silicon nitride waveguide resonators by nanoimprint lithography

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Abstract
In this study, we demonstrate the fabrication of waveguide resonators using nanoimprint technology. Without relying on traditionally costly lithography methods, such as electron-beam lithography or stepper lithography, silicon nitride (Si3N4) resonators with high-quality factors up to the order of 105 can be realized at C-band by nanoimprint lithography. In addition, by properly designing the waveguide geometry, a low-dispersive waveguide can be achieved with waveguide dispersion at around −35 ps/nm/km in the normal dispersion regime, and the waveguide dispersion can be further tuned to be 29 ps/nm/km in the anomalous dispersion regime with the polymer cladding. The tunability of nanoimprinted devices is demonstrated by the aid of microheaters, realizing on-chip optical functionalities. This work offers the potential to fabricate low-dispersive waveguide resonators for integrated modulators and filters in a significantly cost-effective and process-friendly scheme.
Funding Information
  • National Science and Technology Council (112-2221-E-008-064, 112-2622-8-008-004, 113-2221-E-A49-191)

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