Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy
- 6 November 2003
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 240 (2) , 314-317
Abstract
We present the growth of AlN films on vicinal substrates of SiC(0001). The layers were grown by plasma‐assisted molecular beam epitaxy (PAMBE) and examined in‐situ using reflection high‐energy electron diffraction (RHEED). Morphological and structural properties were characterized by atomic force microscopy (AFM) and High Resolution X‐Ray Diffraction (HRXRD), respectively. The obtained results by AFM show two main differences with AlN films grown on nominally flat SiC substrates: a) the absence of spiral growth hillocks, and b) the formation of predominantly straight steps. HRXRD measurements on misoriented substrate rocking curves have revealed good structural quality of AlN films (tilt and twist), as well as a disorientation of the c‐planes of the AlN with respect to the substrate.Keywords
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