Development of 4 T Class MgB2 Bulk Magnets Doped by Ti

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Abstract
We have studied the trapped field properties of Ti-doped MgB 2 bulks that were fabricated by a hot isostatic pressing method. The trapped field values of Ti5% doped bulk with 38 mm in diameter and 7 mm in thickness were about 3.6 T at 13.2 K and 2.8 T at 20 K, which were 1.3 times larger than those of the pristine bulk at each temperature. The critical current density was also enhanced by the Ti-doping from 1.7 × 10 2 A/cm 2 for the pristine bulk to 3.0 × 10 3 A/cm 2 for the Ti5% doped bulk at 20 K under 4 T. The improvement of the flux pinning properties originated from the TiB 2 thin layer at the periphery of the Ti precipitates, which was acted as a strong pinning center.
Funding Information
  • JST A-STEP (AS242Z02673L)
  • Hitachi Metals—Materials Science Foundation
  • JSPS KAKENHI (23560002)

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