Less Strain Energy despite Fewer Misfit Dislocations: The Impact of Ordering
- 13 February 2006
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 96 (6) , 066101
Abstract
The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.Keywords
This publication has 27 references indexed in Scilit:
- High Electron Mobilities in Surfactant-Grown Germanium on Silicon SubstratesJapanese Journal of Applied Physics, 1997
- Lattice accommodation of low-index planes: Ag(111) on Si(001)Physical Review B, 1995
- Interface roughening of Ge δ layers on Si(111)Physical Review B, 1995
- Lattice matching periodic interfacial dislocation network in surfactant-mediated growth of Ge on Si(111)Physica Status Solidi (a), 1994
- Surfactant-mediated growth of Ge on Si(111)Physical Review B, 1994
- Strain relief at hexagonal-close-packed interfacesPhysical Review B, 1994
- Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si(111): strain relief mechanisms and growth kineticsSurface Science, 1992
- Observation of misfit dislocations in epitaxial CoSi2/Si (111) layers by scanning tunneling microscopyApplied Physics Letters, 1991
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966