High Temperature Behaviors of 1–2.5 μm Extended Wavelength In₀.₈₃Ga₀.₁₇As Photodetectors on InP Substrate

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Abstract
The dark current and the photo response characteristics of extended wavelength In 0.83 Ga 0.17 As/InP photodetectors (PDs) with n-In 0.83 Ga 0.17 As absorber doped to 8×10 15 , 7×10 16 and 1×10 17 cm -3 are investigated in an elevated temperature range of -40 to 100°C. The lightly doped PD exhibits a lower (higher) dark current than the heavily doped PD at temperatures higher (lower) than 30°C. The photocurrent, the spectral responsivity and the blackbody response voltage for the heavily doped PD rapidly decrease at temperatures higher than 30°C, while remain almost unchanged until 90°C for the lightly doped PD. The trend of the intermediately doped PD is between the two. In contrast, a consistently increasing trend of the dark noise over the whole measured temperature range are observed for three PDs. Theoretical calculations indicate such behaviors are essentially related with the temperature-dependent variation of the Shockley-Read-Hall lifetimes under different doping concentration.
Funding Information
  • National Natural Science Foundation of China (62075229, 61775228)
  • Shanghai Rising-Star Program (21QA1410600)
  • Shanghai Municipal Science and Technology Major Project (2019SHZDZX01)
  • International Science and Technology Cooperation Program of Shanghai (20520711200)

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