Tunneling spectroscopy of the Si(111)2 × 1 surface
Authors:
- R.M. FeenstraRFR.M. Feenstra
- Joseph A. StroscioJSJoseph A. Stroscio
- A.P. FeinAFA.P. Fein
- 1 March 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 181 (1-2) , 295-306
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Photoemission study of the antibonding surface-state band on Si(111)2×1Physical Review B, 1985
- Voltage-dependent scanning-tunneling microscopy of a crystal surface: GraphitePhysical Review B, 1985
- Conduction-Band and Surface-State Critical Points in Si: An Inverse-Photoemission StudyPhysical Review Letters, 1985
- Differential Reflectivity of Si(111)2×1 Surface with Polarized Light: A Test for Surface StructurePhysical Review Letters, 1984
- Determination of the Fermi-level pinning position at Si(111) surfacesPhysical Review B, 1983
- Reconstruction Mechanism and Surface-State Dispersion for Si(111)-(2×1)Physical Review Letters, 1982
- Reconstruction of Semiconductor Surfaces: Buckling, Ionicity, and-Bonded ChainsPhysical Review Letters, 1982
- Experimental Evidence for One Highly Dispersive Dangling-Bond Band on Si(111) 2 × 1Physical Review Letters, 1982
- Surface states on Si(111)-(2×1)Physical Review B, 1981
- Optical Absorption of Surface States in Ultrahigh Vacuum Cleaved (111) Surfaces of Ge and SiPhysical Review B, 1971