Electrochemical stability of indium tin oxide thin films
Authors:
- M.A. MartínezMMM.A. Martínez
- J. HerreroJHJ. Herrero
- M.T. GutiérrezMGM.T. Gutiérrez
- 1 November 1992
- journal article
- Published by Elsevier in Electrochimica Acta
- Vol. 37 (14) , 2565-2571
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin filmsSolar Energy Materials and Solar Cells, 1992
- Indium-tin-oxide-metal interfacial resistance and its implication for solar cellsSolar Cells, 1989
- Fabrication of monolithic a-Si:H-CuInSe/sub 2//CdS tandem solar cells1988
- Characteristics and Stability of n ‐ Si / SnO2 and n ‐ Si / SnO2 / Pt PhotoanodesJournal of the Electrochemical Society, 1986
- Heterojunction Photoelectrodes: III . Cyclic Voltammetry at Indium Tin Oxide‐Coated Silicon/Aqueous Redox Electrolyte InterfacesJournal of the Electrochemical Society, 1986
- Electrodeposition of CuInX () thin filmsSolar Cells, 1986
- Amorphous Silicon Thin Film Transistors and Memory DevicesMRS Proceedings, 1985
- The influence of input power on the performance of rf sputtered ITO/InP solar cellsJournal of Vacuum Science & Technology B, 1984
- Photoelectrochemical Generation of Chlorine on Catalytically Modified n‐Silicon/Indium Tin Oxide AnodesJournal of the Electrochemical Society, 1982
- Growth of CuInSe2 by molecular beam epitaxyJournal of Applied Physics, 1980