Photo-enhanced chemical wet etching of GaN
Authors:
- 18 September 2002
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 96 (1) , 43-47
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Electrochemistry and Photoetching of n-GaNJournal of the Electrochemical Society, 2000
- Inductively coupled plasma etching of GaNApplied Physics Letters, 1996
- Patterning of AlN, InN, and GaN in KOH-based solutionsJournal of Vacuum Science & Technology A, 1996
- Study of chemically assisted ion beam etching of GaN using HCl gasApplied Physics Letters, 1995
- Wet chemical etching of AlNApplied Physics Letters, 1995
- Displacement of the Bandedges of GaInP2 in Aqueous Electrolytes Induced by Surface ModificationJournal of the Electrochemical Society, 1995
- Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa)Applied Physics Letters, 1993
- Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxyJournal of Vacuum Science & Technology A, 1993
- Chemical Etching of Indium NitrideJournal of the Electrochemical Society, 1992
- Electrolytic Etching of GaNJournal of the Electrochemical Society, 1972