Ion-sensing devices with silicon nitride and borosilicate glass insulators

Authors:
  • LBL.J. Bousse
    L.J. Bousse
  • JSJ.D. Shott
    J.D. Shott
  • JMJ.D. Meindl
    J.D. Meindl

Abstract
Ion-sensitive field-effect transistors (ISFET's) with silicon dioxide, silicon nitride, and borosilicate glass as the active gate material were fabricated and tested for pH-sensing applications. The borosilicate glass and silicon nitride devices were found to have a linear potential/pH response and previous theories of ISFET function were inadequate to explain this. A two-site theory is presented that can explain the features of the potential/pH response of both silicon nitride and borosilicate glass ISFETs. The model is easily extended to any two-site system.

This publication has 27 references indexed in Scilit: