Adsorption and Dissociation of Phosphine on Si(001)
Authors:
- 1 January 1996
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry
- Vol. 100 (12) , 4961-4969
Abstract
No abstract availableKeywords
This publication has 25 references indexed in Scilit:
- Adsorption of phosphorus on Si(111): Structure and chemical reactivityPhysical Review B, 1991
- The adsorption and thermal decomposition of PH3 on Si(111)-(7 × 7)Surface Science, 1990
- PH3 surface chemistry on Si(111)-(7×7): A study by Auger spectroscopy and electron stimulated desorption methodsJournal of Applied Physics, 1990
- Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon SystemJournal of the Electrochemical Society, 1984
- Theory of surface-defect states and Schottky barrier heights: Application to InAsJournal of Vacuum Science & Technology B, 1984
- P‐Doped Polysilicon Film Growth TechnologyJournal of the Electrochemical Society, 1982
- On the Enhancement of Silicon Chemical Vapor Deposition Rates at Low TemperaturesJournal of the Electrochemical Society, 1976
- A LEED and AES study of the Ph3 adsorption on clean Si(111)Surface Science, 1973
- Arsenic Glass Source Diffusion in Si and SiO[sub 2]Journal of the Electrochemical Society, 1973
- A low energy electron diffraction study of the PH3 adsorption on the Si (111) surfaceSurface Science, 1967