Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS

This publication has 22 references indexed in Scilit:

• Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100)
  Applied Physics Letters, 2004
• Atomic Layer Deposition of High-$kappa$Dielectric for Germanium MOS Applications—Substrate Surface Preparation
  IEEE Electron Device Letters, 2004
• $hbox Al_2hbox O_3$–Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual Gates
  IEEE Electron Device Letters, 2004
• Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate
  IEEE Electron Device Letters, 2004
• Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy
  Applied Physics Letters, 2003
• Towards understanding epitaxial growth of alternative high-K dielectrics on Si(001): Application to praseodymium oxide
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2003
• Growth of Perovskites with Crystalline Interfaces on Si(100)
  MRS Proceedings, 2003
• High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces
  Applied Physics Letters, 2002
• Lattice-matched, epitaxial, silicon-insulating lanthanum yttrium oxide heterostructures
  Applied Physics Letters, 2002
• Direct heteroepitaxy of crystalline Y2O3 on Si (001) for high-k gate dielectric applications
  Journal of Applied Physics, 2001