NON-IDEAL CURRENT TRANSPORT IN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS
Authors:
- 1 December 2008
- journal article
- research article
- Published by World Scientific Pub Co Pte Ltd in International Journal of High Speed Electronics and Systems
- Vol. 18 (04) , 935-947
Abstract
We describe a new analytical model of a Heterostructure Field Effect Transistors (HFETs) that accounts for electron trapping in the gate-drain spacing of the device and for related non-ideal device behavior. Under conditions of a very strong trapping, the electron velocity saturates outside the gate, in the trapping region, and the negative trapped charge leads to relatively large differential output conductance at the drain voltages exceeding the knee voltage. Also under the conditions of severe trapping, the negative trapped charge leads to the positive offset of the output current-voltage (I-V) characteristic. The model describes quite well numerous experimental data for passivated and unpassivated AlGaN / GaN HFETs with and without field plates (FP) under different bias conditions.Keywords
This publication has 22 references indexed in Scilit:
- Analytical HFET $I$– $V$ Model in Presence of Current CollapseIEEE Transactions on Electron Devices, 2008
- Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxideSemiconductor Science and Technology, 2007
- SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORSInternational Journal of High Speed Electronics and Systems, 2007
- Field-Plate Engineering for HFETsIEEE Transactions on Electron Devices, 2005
- 30-W/mm GaN HEMTs by Field Plate OptimizationIEEE Electron Device Letters, 2004
- High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behaviorIEEE Transactions on Electron Devices, 2003
- Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plateIEEE Transactions on Electron Devices, 2001
- The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETsIEEE Transactions on Electron Devices, 2001
- Theory of junction between two-dimensional electron gas and p-type semiconductorIEEE Transactions on Electron Devices, 1992
- The instability of quasineutral waves in a semiconductor with two kinds of carriersPhysics Letters A, 1971