Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes
Authors:
- 1 January 2020
- conference paper
- Published by Optica Publishing Group
- p. AF1I.3
Abstract
Performance of the deep-ultraviolet LEDs is improved by replacing conventional p-doped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation.Keywords
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