Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory
Authors:
- J. GuyJGJ. Guy
- G. MolasGMG. Molas
- E. VianelloEVE. Vianello
- C. CarabasseCCC. Carabasse
- P. BlaisePBP. Blaise
- M. BernardMBM. Bernard
- E. SouchierESE. Souchier
- P. FrancoisPFP. Francois
- F. AussenacFAF. Aussenac
- V. DelayeVDV. Delaye
- F. ClermidyFCF. Clermidy
- B. De SalvoBSB. De Salvo
- 1 July 2014
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 563, 15-19
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS processSolid-State Electronics, 2011
- Investigation of the Reliability Behavior of Conductive-Bridging Memory CellsIEEE Electron Device Letters, 2009
- A Nonvolatile 2-Mbit CBRAM Memory Core Featuring Advanced Read and Program ControlIEEE Journal of Solid-State Circuits, 2007