Trapping levels in TlGaSe2 single crystals
- 13 March 2013
- journal article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 566, 108-111
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Carrier trapping and recombination in TlGaSe2 layered crystalsPhysica Status Solidi (b), 2012
- Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2 for Radiation DetectorsChemistry of Materials, 2011
- Characterization of TlGaSe2 single crystalsPhysica B: Condensed Matter, 2010
- Some special dielectric characteristics of TlGaSe2 layered crystalsCrystal Research and Technology, 2006
- Gallium and thalliumstudy of phase transitions and incommensurability in the layered semiconductorPhysical Review B, 2004
- Time relaxation of dielectric constant in the commensurate phase of TlGaSe2Solid State Communications, 2004
- Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2Solid State Communications, 2003
- Photoconductivity of TlGaSe2 layered single crystalsJournal of Physics D: Applied Physics, 2002
- The Optical Absorption Edge of p-Type Tl(1-x)GaPrxSe2and TlGaSe2Physica Scripta, 1999
- Ferroelectricity and polytypism in TlGaSe2 CrystalsSolid State Communications, 1991