Clustering of oxygen atoms around carbon in silicon
Authors:
- 1 December 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11) , 4049-4055
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- An infrared and neutron scattering analysis of the precipitation of oxygen in dislocation-free siliconJournal of Physics C: Solid State Physics, 1984
- Infrared Spectroscopical and TEM Investigations of Oxygen Precipitation in Silicon Crystals with Medium and High Oxygen ConcentrationsPhysica Status Solidi (a), 1984
- Oxygen precipitation and microdefects in Czochralski-grown silicon crystalsPhysica Status Solidi (a), 1984
- The effect of carbon on oxygen precipitation in high carbon CZ silicon crystalsMaterials Research Bulletin, 1983
- Defects in siliconReports on Progress in Physics, 1982
- Thermally induced microdefects in Czochralski-grown silicon crystalsJournal of Crystal Growth, 1982
- Influence of carbon on oxygen behavior in siliconPhysica Status Solidi (a), 1981
- Interstitial defects involving carbon in irradiated siliconJournal of Physics C: Solid State Physics, 1975
- Irradiation damage in carbon-doped silicon irradiated at low temperatures by 2 MeV electronsRadiation Effects, 1971
- Diffraction contrast from spherically symmetrical coherency strainsPhilosophical Magazine, 1963