Effect of Optical Phonon Scattering on the Performance of GaN Transistors
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- 3 April 2012
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 33 (5) , 709-711
Abstract
A model based on optical phonon scattering is developed to explain peculiarities in the current drive, transconductance, and high-speed behavior of short-gate-length GaN transistors. The model is able to resolve these peculiarities and provides a simple way to explain transistor behavior in any semiconductor material system in which electron-optical-phonon scattering is strong.Keywords
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