Optical and structural properties of polycrystalline 3C-SiC films
Authors:
- 30 October 2006
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (18) , 181904
Abstract
In this letter, polycrystalline (111) films were deposited by plasma enhanced chemical vapor deposition system at a temperature of using a gas mixture of . The optical properties of deposited films with different feed gases and different structures were investigated. In these studies, a broad photoluminescence band was observed for films with lower crystallinity and the radiative transitions between the conduction and valance band tails were suggested as the origin of the observed peak. The band gap of these polycrystalline SiC films was estimated at around .
Keywords
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