Dielectric properties of A- and B-site doped BaTiO3: Effect of La and Ga
Authors:
- Devidas GulwadeDGDevidas Gulwade
- Prakash GopalanPGPrakash Gopalan
- 1 June 2009
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 404 (12-13) , 1799-1805
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Diffuse phase transition in BaTi1−xSnxO3 ceramics: An intermediate state between ferroelectric and relaxor behaviorJournal of Applied Physics, 2006
- Effects of La doping on the cubic–tetragonal phase transition and short-range ordering in PbTiO3Journal of Applied Physics, 2002
- B-site vacancy as the origin of spontaneous normal-to-relaxor ferroelectric transitions in La-modified PbTiO3Applied Physics Letters, 2000
- Electrical and structural characteristics of lanthanum-doped barium titanate ceramicsJournal of Applied Physics, 1999
- Spherical random-bond–random-field model of relaxor ferroelectricsPhysical Review B, 1999
- Novel Doping Mechanism for Very‐High‐Permittivity Barium Titanate CeramicsJournal of the American Ceramic Society, 1998
- Dielectric characteristics of doped Ba1 − xSrxTiO3 at the paraelectric stateMaterials Chemistry and Physics, 1997
- A new framework for understanding relaxor ferroelectricsJournal of Physics and Chemistry of Solids, 1990
- Hydrothermal synthesis of Ba(Ti, Sn)O3 fine powders and dielectric properties of the corresponding ceramicsCeramics International, 1988
- Study of phase transitions and properties of tetragonal (Pb,La)(Zr,Ti)O3 ceramics—IIJournal of Physics and Chemistry of Solids, 1980