Effect of static uniaxial stress on the Raman spectrum of silicon
Authors:
- E. AnastassakisEAE. Anastassakis
- A. PinczukAPA. Pinczuk
- E. BursteinEBE. Burstein
- F.H. PollakFPF.H. Pollak
- M. CardonaMCM. Cardona
- 1 January 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (2) , 133-138
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968
- Raman Scattering by Silicon and GermaniumPhysical Review B, 1967
- RAMAN SCATTERING IN SILICONApplied Physics Letters, 1965
- The Raman effect in crystalsAdvances in Physics, 1964