Minimization of thermoelastic stresses in Czochralski grown silicon: application of the integrated system model
Authors:
- D.E. BornsideDBD.E. Bornside
- T.A. KinneyTKT.A. Kinney
- R.A. BrownRBR.A. Brown
- 1 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 108 (3-4) , 779-805
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Finite element/Newton method for the analysis of Czochralski crystal growth with diffuse‐grey radiative heat transferInternational Journal for Numerical Methods in Engineering, 1990
- A finite element method for analysis of fluid flow, heat transfer and free interfaces in Czochralski crystal growthInternational Journal for Numerical Methods in Fluids, 1989
- Elastic and plastic anisotropy during growth from the melt of single semiconductor crystalsJournal of Materials Research, 1988
- LU decomposition of matrices with augmented dense constraintsInternational Journal for Numerical Methods in Engineering, 1987
- Dislocation dynamics of web type silicon ribbonJournal of Crystal Growth, 1987
- Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growthJournal of Crystal Growth, 1986
- Deformation behaviour and dislocation formation in undoped and doped (Zn, S)InP crystalsJournal of Crystal Growth, 1985
- Czochralski growth of siliconJournal of Crystal Growth, 1983
- Finite-element methods for steady solidification problemsJournal of Computational Physics, 1983
- Some defects in crystals grown from the melt - I. Defects caused by thermal stressesProceedings of the Royal Society of London. A. Mathematical and Physical Sciences, 1956