Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures
Authors:
- F. HeliodoreFHF. Heliodore
- G. SalmerGSG. Salmer
- O.L. El-SayedOEO.L. El-Sayed
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 824-830
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Performance analysis of sub-micron gate GaAs MESFETsSolid-State Electronics, 1987
- Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterizationSolid-State Electronics, 1986
- The role of the device surface in the high voltage behaviour of the GaAs MESFETSolid-State Electronics, 1986
- Dependence of maximum gate-drain potential in GaAs MESFET's upon localized surface chargeIEEE Electron Device Letters, 1985
- Effects of Si3N4, SiO, and polyimide surface passivations on GaAs MESFET amplifier RF stabilityIEEE Electron Device Letters, 1984
- New modeling of GaAs MESFET'sIEEE Transactions on Electron Devices, 1983
- Gate formation in GaAs MESFET's using ion-beam etching technologyIEEE Transactions on Electron Devices, 1982
- NON STEADY STATE CARRIER TRANSPORT IN SEMICONDUCTOR, APLICATION TO THE MODELLING OF SUBMICRON DEVICESLe Journal de Physique Colloques, 1981
- Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamicsJournal of Applied Physics, 1980
- Transport equations for electrons in two-valley semiconductorsIEEE Transactions on Electron Devices, 1970