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Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
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Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs
Authors:
Takeshi Ohshima
Takeshi Ohshima
MY
Masahito Yoshikawa
Masahito Yoshikawa
HI
Hisayoshi Itoh
Hisayoshi Itoh
KK
Kazutoshi Kojima
Kazutoshi Kojima
SO
Sohei Okada
Sohei Okada
IN
Isamu Nashiyama
Isamu Nashiyama
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10 May 2000
journal article
Published by
Trans Tech Publications, Ltd.
in
Materials Science Forum
Vol. 338-342
,
1299-1302
DOI:
10.4028/www.scientific.net/msf.338-342.1299
Abstract
No abstract available
Keywords
CHANNEL MOBILITY
FIELD-EFFECT TRANSISTOR
METAL-OXIDE-SEMICONDUCTOR (MOS)
POST-OXIDATION ANNEALING
THRESHOLD VOLTAGE
Cited
Cited by 3 articles
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