Systematic and rigorous extraction method of HBT small-signal model parameters
Authors:
- F.M. GhannouchiFGF.M. Ghannouchi
- 6 February 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 54 (2) , 682-688
Abstract
This paper presents a systematic and rigorous analytical parameter-extraction method for a heterojunction bipolar transistor (HBT) small-signal equivalent-circuit model. The proposed method relies exclusively on S-parameter measurements. Exact closed-form equations are used for the direct extraction of circuit elements. The method is characterized by its simplicity and ease of implementation. It is applied to predict the small-signal characteristics of transistors from different foundries. Excellent agreement between modeled and measured S-parameters is observed up to 20 GHz.Keywords
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