Deposition factors and band gap of zinc-blende AlN
Authors:
- 15 March 2001
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 89 (6) , 3331-3336
Abstract
Successful deposition of zinc-blende AlN films with thickness up to 1000 Å was performed with plasma source molecular beam epitaxy. The films were epitaxial to the Si(001) substrate. The formation of a thin 3C-SiC layer on the Si(001) surface is one of the important factors for the formation of zinc-blende AlN. Evidence for the presence of 3C-SiC is provided by an Auger electron spectroscopy depth profile and a high-resolution transmission electron microscopy plot profile. Spectroscopic ellipsometry was used to determine the optical constants of zinc-blende AlN in the range from 1.85 to 6.5 eV. The extinction coefficient data indicates that zinc-blende AlN is an indirect semiconductor with a band gap of ∼5.34 eV.Keywords
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