Optical and photoelectric properties of TlGaSe2 layered crystals
Authors:
- J.A. KalomirosJ.A. Kalomiros
- N. KalkanNKN. Kalkan
- M. HaniasM. Hanias
- A.N. AnagnostopoulosAAA.N. Anagnostopoulos
- K. KambasKKK. Kambas
- 1 November 1995
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 96 (8) , 601-607
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Excitonic and other interband transitions insingle crystalsPhysical Review B, 1994
- Negative-differential-resistance effects in theternary semiconductorPhysical Review B, 1993
- Higher interband transitions in the uv region of GaSePhysical Review B, 1991
- Band structure of TlGaSe2Physica Status Solidi (b), 1983
- High-pressure Raman study of the ternary chalcogenides TlGa, TlGa, TlIn, and TlInPhysical Review B, 1982
- Near‐Band‐Edge Optical Properties of TlGaS2xSe2(1−x) Mixed CrystalsPhysica Status Solidi (b), 1980
- The fundamental optical absorption edge of TlGaS2xSe2(1−x) solid solutionsPhysica Status Solidi (b), 1979
- Untersuchungen über ternäre Chalkogenide. XXIV. Zur Struktur des TlGaSe2Zeitschrift für anorganische und allgemeine Chemie, 1978
- Far-infrared reflection spectra of TlGaSe2Physica Status Solidi (a), 1976
- Notizen: Zur Struktur ternärer Chalkogenide des Thalliums mit Aluminium, Gallium und Indium, XXII* / On the Structure of Ternary Thalliumchalkogenides with Aluminium, Gallium and Indium, XXII*Zeitschrift für Naturforschung B, 1974