Drain Current Modeling of Antiambipolar TFTs in Subthreshold and Above-Threshold Regimes

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Abstract
The drain current modeling of antiambipolar thin film transistors (TFTs) in subthreshold and above-threshold regimes is presented. The drain current expressions of the n-type and p-type unipolar TFTs are extended to describe the electron current and hole current for antiambipolar TFTs, respectively. Applying the rule “smaller than the smallest” with the drain–source voltage-dependent empirical parameter, the drain current model for the antiambipolar TFTs is developed. The model is implemented in the circuit simulator using the Verilog-A programming language. A ternary inverter, which consists of antiambipolar TFT, p-type unipolar TFT, and n-type unipolar TFTs, is demonstrated.
Funding Information
  • Shenzhen Municipal Scientific Program (JCYJ20220818100808019)
  • Start-up funding of Anhui Polytechnic University (2023YQQ003)
  • Key Laboratory Funding of Anhui Province (202205p12030001)
  • Double Tops Teaching Staff Construction of Yangtze University (8021003201)

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