Achieving the low stress and defects of diamond film by introduction of SiNx dielectric layer
Authors:
- Zhiliang YangZYZhiliang Yang
- Xurui FengXFXurui Feng
- Yunkai WangYWYunkai Wang
- Siyi ChanSCSiyi Chan
- Zhijian GuoZGZhijian Guo
- Yuchen LiuYLYuchen Liu
- Kang AnKAKang An
- Liangxian ChenLCLiangxian Chen
- Jinlong LiuJLJinlong Liu
- Junjun WeiJWJunjun Wei
- Chengming LiCLChengming Li
- 2 April 2025
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 155
Abstract
No abstract availableFunding Information
- National Key Research and Development Program of China (2022YFB3608600)
- North China University of Technology (2023YZZKY12)
- National Natural Science Foundation of China (52102034, 52350362, 52172037)
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