Temperature effects on the radiation response of MOS devices
Authors:
- J.R. SchwankJSJ.R. Schwank
- F.W. SextonFSF.W. Sexton
- D.M. FleetwoodDFD.M. Fleetwood
- R.V. JonesRJR.V. Jones
- R.S. FloresRFR.S. Flores
- M.S. RodgersMRM.S. Rodgers
- K.L. HughesKHK.L. Hughes
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 35 (6) , 1432-1437
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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