Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence
Authors:
- A LatrecheALA Latreche
- Z OuennoughiZOZ Ouennoughi
- R WeissRWR Weiss
- H RysselHRH Ryssel
- 26 April 2011
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 26 (8)
Abstract
No abstract availableKeywords
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