The perfection of bridgman-grown Bi4Ge3O12 crystals
Authors:
- 31 January 1985
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 20 (1) , 79-83
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Characterization of thin layers on perfect crystals with a multipurpose high resolution x-ray diffractometerJournal of Vacuum Science & Technology B, 1983
- Growth and characterization of Bi4Ge3O12 single crystalsActa Physica Academiae Scientiarum Hungaricae, 1982
- Bismuth germanate scintillators as detectors for high-energy gamma radiationNuclear Instruments and Methods in Physics Research, 1981
- Improvement in the scintillation conversion efficiency of Bi4Ge3O12 single crystalsJournal of Crystal Growth, 1981
- Bismuth Germanate: A High-Z Gamma-Ray and Charged Particle DetectorIEEE Transactions on Nuclear Science, 1975
- Luminescence of Bi4 Ge3 O12 : Spectral and decay propertiesJournal of Applied Physics, 1973
- Czochralski synthesis and properties of rare-earth-doped bismuth germanate (Bi4Ge3O12)Materials Research Bulletin, 1972
- Croissance d'eulytine Bi4Si3O1 2 et des composés substitués Bi4Ge3O12 par la méthode CzochralskiJournal of Crystal Growth, 1971
- Einkristallzüchtung von wismutgermanat (Bi4(GeO4)3)Journal of Crystal Growth, 1969
- Crystal Growth and Electro-Optic Effect of Bismuth Germanate, Bi4 (GeO4)3Journal of Applied Physics, 1965