SiC microwave power technologies
Authors:
- J.W. PalmourJPJ.W. Palmour
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 90 (6) , 987-992
Abstract
Two SiC transistors that are investigated for microwave power applications are the 4H-SiC static induction transistor (SIT) and the 4H-SiC metal-semiconductor field-effect transistor (MESFET). Ultrahigh frequency 4H-SiC SITs have demonstrated record-breaking pulsed power per package (900 W) with excellent associated power-added efficiency (PAE) of 78%. S band 4H-SiC MESFETs have shown a record power-density of 5.6 W/mm and 36% PAE, as well as 80 W continuous-wave (CW) power (1.6 W/mm), with an associated PAE of 38%. X-band MESFET power density of 4.3 W/mm was obtained for exploratory CW devices. These performance gains are afforded by the advantageous material properties of silicon carbide. SiC SIT technology offers many military system advantages including lower cost, lower weight, higher power and high temperature of operation and higher efficiency transmitters with minimal cooling requirements. SiC RF MESFET's and circuits are candidates for use in efficient linear transmitters for commercial and military communications.Keywords
This publication has 15 references indexed in Scilit:
- Progress in high power SiC microwave MESFETs2003
- Application of high power silicon carbide transistors at radar frequencies2002
- SiC MESFET with output power of 50 watts CW at S-band2002
- High power 4H-SiC static induction transistors2002
- Surface Induced Instabilities in 4H-SiC Microwave MESFETsMaterials Science Forum, 2000
- Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating WaferMaterials Science Forum, 2000
- Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETsMaterials Science and Engineering: B, 1999
- Silicon Carbide MESFET's for High-Power S-Band ApplicationsMaterials Science Forum, 1998
- Static induction transistors optimized for high-voltage operation and high microwave power outputIEEE Transactions on Electron Devices, 1985
- Field-effect transistor versus analog transistor (static induction transistor)IEEE Transactions on Electron Devices, 1975