Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si Structures

Authors:
  • BDB. E. Deal
    B. E. Deal
  • EME. L. MacKenna
    E. L. MacKenna
  • PCP. L. Castro
    P. L. Castro
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Abstract
The properties of poly‐(methyl methacrylate), a new electron resist developed at IBM Research, are presented in comparison to commercial photoresists under electron beam exposure. It is shown that methacrylate resist, with suitable processing, presents a means for submicron device fabrication with reasonable speed. Transistors with one‐ and half‐micron emitter stripe widths have been fabricated using this resist as a medium for diffusion masking with . Also, a method for producing high‐resolution, defect‐free masks through methacrylate resist is presented.