Optical force in terahertz band generated by the semiconductor (InSb)
Authors:
- 1 July 2014
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1095-1097
Abstract
In this literature, a force generator based on plasmonic metamaterial in terhaertz band is presented. An SPP-like (Surface Plasmon Polariton) field trapping can be obtained and this field trapping leads to a enhanced field density and a large force. To excite SPP in terahertz band, the semiconductor(InSb) is utilized to obatain a lower plasmonic frequency so that SPP phenomenon can take place at the terahertz band. A multi-layered structure which consists of a dielectric layer, an air gap and a semiconductor layer is presented. Simulated results show a repulsive force which is 2 orders of magnitude higher than that by a force generator in visible band.Keywords
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