Impact of the vertical SOI 'DELTA' structure on planar device technology
Authors:
- D. HisamotoDHD. Hisamoto
- T. KagaTKT. Kaga
- E. TakedaETE. Takeda
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (6) , 1419-1424
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Analysis of conduction in fully depleted SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- Short-channel effects in SOI MOSFETsIEEE Transactions on Electron Devices, 1989
- Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI filmIEEE Transactions on Electron Devices, 1989
- Reduction of kink effect in thin-film SOI MOSFETsIEEE Electron Device Letters, 1988
- Formation of submicron silicon-on-insulator structures by lateral oxidation of substrate-silicon islandsJournal of Vacuum Science & Technology B, 1988
- Experimental technology and characterization of self-aligned 0.1µm-gate-length low-temperature operation NMOS devices1987
- New effects of trench isolated transistor using side-wall gates1987
- Power Reduction Techniques in Megabit DRAM'sIEEE Journal of Solid-State Circuits, 1986
- Subthreshold slope of thin-film SOI MOSFET'sIEEE Electron Device Letters, 1986
- A trench transistor cross-point DRAM cell1985