One-phonon band-mode absorption by impurity resonances in diamond and silicon

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Abstract
The one-phonon, band-mode, infrared absorption spectra activated by antimony, arsenic, boron, oxygen and phosphorus in silicon, and by isolated nitrogen atoms and radiation damage centres in diamond have been investigated. Absorption features attributed to in-band resonances are observed in most cases. Neither the shape nor the strength of the absorption spectra can be accounted for adequately in terms of the isotopic-defect theory of Dawber & Elliott. In the case of silicon, the absorption strengths suggest that the effective charge is not confined exclusively to the impurity atoms.