Electron emission from multilayer ensembles of vertically coupled InAs quantum dots in an n-GaAs matrix
- 10 September 2008
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 42 (9) , 1104-1107
Abstract
Electron emission from multilayer arrays of vertically coupled InAs quantum dots into the n-GaAs matrix in Schottky-barrier structures (electron concentration n ≈ 2 × 1016 cm−3) is studied by admittance spectroscopy. It is established that, in the temperature region below ∼70 K, electron emission in a rate range of 3 × 104–3 × 106 s−1 proceeds via thermally activated tunneling through intermediate virtual states. As the number of layers in the quantum dot array increases from three to ten, a decrease in the electron emission rate is observed.Keywords
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