Novel intrinsic and extrinsic engineering for high-performance high-density self-aligned InGaAs MOSFETs: Precise channel thickness control and sub-40-nm metal contacts
- 1 December 2014
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 25.1.1-25.1.4
Abstract
We have fabricated self-aligned tight-pitch InGaAs Quantum-well MOSFETs (QW-MOSFETs) with scaled channel thickness (t c ) and metal contact length (L c ) by a novel fabrication process that features precise dimensional control. Impact of t c scaling on transport, resistance and short channel effects (SCE) has been studied. A thick channel is favorable for transport, and a mobility of 8800 cm 2 /V·s is obtained with t c =11 nm at N s =2.6×10 12 cm -2 . Also, a record g m,max of 3.1 mS/μm and R on of 190 Ω·μm are obtained in MOSFETs with t c =9 nm and gate length L g =80 nm. In contrast, a thin channel is beneficial for SCE control. In a device with t c =4 nm and L g =80 nm, S is 111 mV/dec at V ds = 0.5 V. For the first time, working front-end device structures with 40 nm long contacts and gate-to-gate pitch of 150 nm are demonstrated. A new method to study the resistance properties of nanoscale contacts is proposed. We derive a specific contact resistivity between the Mo contact metal and the n + InGaAs cap of ρ=(8±2)×10 -9 Ω·cm 2 . We also infer a metal-to-channel resistance of 70 Ω·μm for 40 nm long contacts.Keywords
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